PART |
Description |
Maker |
M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36 |
64-Mbit (4 Mbits ×16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V http://
|
PM39F020-70JCE PM39F020-55PCE PM39F020-55JCE PM39F |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory 1兆位/ 2 4兆位5伏,只有闪存的CMOS
|
PMC-Sierra, Inc.
|
M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
SST25VF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Spi Serial Flash
|
SST
|
SST39LF400A SST39VF800A SST39LF800A SST39VF200A SS |
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Microchip Technology
|
SST39VF200A-70-4C-B3KE SST39VF800A-70-4C-B3KE SST3 |
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
SST39VF6401 SST39VF6401-70-4C-B1K SST39VF6401-70-4 |
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
|
SST[Silicon Storage Technology, Inc]
|
DA28F016XS15 E28F016XS20 28F016XS DA28F016XS-15 DA |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
|
INTEL[Intel Corporation]
|
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
|
意法半导 STMicroelectronics N.V.
|
T2235 T2232 T2231 |
Pipe cutters
|
List of Unclassifed Manufacturers
|
KL-07LS |
LIGHT PIPE
|
KINGBRIGHT[Kingbright Corporation]
|
SST31LF021-300-4E-WH SST31LF021E-300-4E-WH SST31LF |
2 Mbit Flash 1 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO32 2 Mbit Flash 1 Mbit SRAM ComboMemory 2 Mbit闪存1兆位的SRAM ComboMemory
|
Silicon Storage Technology, Inc.
|